Descripción
Transistor IGBT RJP30E2 TO-3P RJP30E2DPK RENESAS
Silicon N Channel IGBT High Speed Power Switching
Features
•Trench gate technology (G5H series)
•Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ
•High speed switching tf = 150 ns typ
•Low leak current Ices = 1 µA max
•IPackage TO-3P
Features
•Trench gate technology (G5H series)
•Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ
•High speed switching tf = 150 ns typ
•Low leak current Ices = 1 µA max
•IPackage TO-3P
