Descripción
Fabricante IXYS
Tipo de transistor N-MOSFET
Tecnología Trench™
Polarización unipolar
Tensión drenaje-fuente 100V
Corriente del drenaje 160A
Poder disipado 430W
Carcasa TO220AB
Tensión puerta-fuente ±20V
Resistencia en estado de transferencia 7mO
Montaje THT
Carga de puerta 132nC
Tiempo de disponibilidad 60ns
Peso bruto: 2,033gr
Denominación de fabricante: IXTP160N10T
TrenchMV™ Power MOSFET, N-Channel Enhancement Mode, Avalanche Rated
Features.:
– Ultra-low On Resistance
– Avalanche Rated
– Low package inductance: easy to drive and to protect
– 175 °C Operating Temperature
– Fast Intrinsic Diode
Advantages.:
– Easy to mount
– Space savings
– High power density
Applications.:
– Automotive: Motor Drives, 42V Power Bus, ABS Systems
– DC/DC Converters and Off-line UPS
– Primary Switch for 24V and 48V Systems
– Distributed Power Architechtures and VRMs
– Electronic Valve Train Systems
– High Voltage Synchronous Recifier
– High Current Switching Applications
