Descripción
Transistor IGBT RJP30E2 RJP30E2DPP TO-220F RENESAS
Silicon N Channel IGBT High Speed Power Switching
Features
•Trench gate technology (G5H series)
•Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ
•High speed switching tf = 150 ns typ
•Low leak current ICES = 1 µA max
•Isolated package TO-220FL
