TRANSISTOR IGBT GW80H65DFB STGW80H65DFB, TO-247

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Código: 028GW80H65DFB Categorías: ,

Descripción

Fabricante    STMicroelectronics
Tipo de transistor    IGBT
Tensión colector-emisor    650V
Corriente de colector    80A
Potencia disipada    470W
Carcasa    TO247-3
Tensión entrada – emisor    ±20V
Corriente de colector en impulso    300A
Montaje    THT
Carga de puerta    414nC

Features
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A
• Tight parameter distribution
• Safe paralleling
• Positive VCE(sat) temperature coefficient
• Low thermal resistance
• Very fast soft recovery antiparallel diode

Applications
• Photovoltaic inverters
• High frequency converters

Description
These devices are IGBTs developed using an advanced proprietary trench
gate fieldstop structure. These devices are part of the new HB series of
IGBTs, which
represent an optimum compromise between conduction and switching loss to
maximize the efficiency of any frequency converter. Furthermore, the
slightly positive
VCE(sat) temperature coefficient and very tight parameter distribution
result in safer
paralleling operation.

 

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