Descripción
Fabricante STMicroelectronics
Tipo de transistor IGBT
Tensión colector-emisor 650V
Corriente de colector 80A
Potencia disipada 470W
Carcasa TO247-3
Tensión entrada – emisor ±20V
Corriente de colector en impulso 300A
Montaje THT
Carga de puerta 414nC
Features
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A
• Tight parameter distribution
• Safe paralleling
• Positive VCE(sat) temperature coefficient
• Low thermal resistance
• Very fast soft recovery antiparallel diode
Applications
• Photovoltaic inverters
• High frequency converters
Description
These devices are IGBTs developed using an advanced proprietary trench
gate fieldstop structure. These devices are part of the new HB series of
IGBTs, which
represent an optimum compromise between conduction and switching loss to
maximize the efficiency of any frequency converter. Furthermore, the
slightly positive
VCE(sat) temperature coefficient and very tight parameter distribution
result in safer
paralleling operation.
